Non-volatile semiconductor memory of a metal ferroelectric field

Details Non-volatile semiconductor memory of a metal ferroelectric field Non-volatile semiconductor memory of a metal ferroelectric field

1996-09-19

1998-06-16

Zarabian, A.

Static information storage and retrieval

Floating gate

365145, 36518508, G11C 1134

Patent

active

057681856

ABSTRACT:
On the surface of a semiconductor substrate between a source region and a drain region formed on the semiconductor substrate, an insulating layer, a conductive thin film used as a floating electrode, a ferroelectric thin film and a conductive thin film used as a control electrode are successively formed. Writing or erasing is performed by causing a potential difference between the control electrode and the semiconductor substrate to reverse the polarization of the ferroelectric thin film.

REFERENCES:
patent: 4630086 (1986-12-01), Sato
patent: 4888630 (1989-12-01), Paterson
patent: 5293510 (1994-03-01), Takenaka
patent: 5345415 (1994-09-01), Nakao
patent: 5498888 (1996-03-01), Ozawa

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