Non-volatile semiconductor memory including a high voltage switc

Static information storage and retrieval – Floating gate – Particular biasing

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36523006, 36518909, G11C 1140

Patent

active

049244388

ABSTRACT:
A non-volatile semiconductor memory device has a plurality of memory cells which are coupled to a plurality of row or column lines through which a high voltage is supplied in a data write operation and a plurality of switching circuits, each of which is coupled to the corresponding row or column line. In a data write operation, only one of switching circuits is turned on to supply the high voltage to only one row or column lines coupled to a memory cell in which a data is to be written.

REFERENCES:
patent: 4511811 (1985-04-01), Gupta
patent: 4533934 (1985-08-01), Smith
patent: 4583205 (1986-04-01), Watanabe
patent: 4597062 (1986-06-01), Asano et al.
patent: 4638466 (1987-01-01), Fukumoto

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