Non-volatile semiconductor memory device with variable source vo

Details Non-volatile semiconductor memory device with variable source vo Non-volatile semiconductor memory device with variable source vo

1997-07-07

1999-04-06

Nguyen, Viet Q.

Static information storage and retrieval

Floating gate

Particular biasing

365218, 36523003, 36518909, 36518533, G11C 1606

Patent

active

058927158

ABSTRACT:
In a non-volatile semiconductor memory device, a memory cell array composed of a plurality of non-volatile memory cells is provided. Each word line is connected to a row of the memory cell array, and each bit line is connected to a column of the memory cell array. The memory cell array is divided into N blocks (N is an integer more than 1) in a row direction. A control signal generating section monitors erase operations to each of the N blocks to generate an erase operation history data for each of the N blocks and generates a control signal for each of the N blocks other than a selected block based on the erase operation history data for the corresponding block, when a write operation is performed to the selected block. A source voltage generating section generates a source voltage for each of the N blocks other than the selected block based on the corresponding control signal to supply the generated source voltage to a common source node of the corresponding block, when the write operation is performed to the selected block.

REFERENCES:
patent: 5172338 (1992-12-01), Harari et al.
patent: 5270979 (1993-12-01), Harari et al.
patent: 5396468 (1995-03-01), Harari et al.
patent: 5504760 (1996-04-01), Harari et al.

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