Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-10-23
2007-10-23
Ho, Hoai V. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
Reexamination Certificate
active
11219756
ABSTRACT:
A non-volatile semiconductor memory device includes: a memory cell array, in which electrically rewritable and non-volatile memory cells are arranged; a sense amplifier circuit configured to read data of the memory cell array; and a pass/fail detection circuit configured to detect write or erase completion based on verify-read data stored in the sense amplifier circuit in data write or erase mode, wherein the pass/fail detection circuit comprises a data latch, into which a defective column isolation data is writable in accordance with a command input.
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Hosono Koji
Kawai Koichi
Kojima Masatsugu
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