Non-volatile semiconductor memory device with memory transistor

Details Non-volatile semiconductor memory device with memory transistor Non-volatile semiconductor memory device with memory transistor

2006-02-21

2006-02-21

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185200, C365S185220

Reexamination Certificate

active

07002846

ABSTRACT:
In the present flash memory a threshold voltage of a memory transistor to which data is written is detected and the detected value is used to set an initial value of a pulse voltage of a write pulse signal, and whenever the write pulse signal is applied, the pulse voltage is increased by a step voltage. The memory transistor's drain current and the threshold voltage's variation can be smaller than when a fixed pulse voltage is applied, as conventional.

REFERENCES:
patent: 5422842 (1995-06-01), Cernea et al.
patent: 6807100 (2004-10-01), Tanaka
patent: 10-228784 (1998-08-01), None
patent: 10-228786 (1998-08-01), None
patent: 11-273386 (1999-10-01), None
patent: 2000-30476 (2000-01-01), None
patent: 2003-203488 (2003-07-01), None
U.S. Appl. No. 10/660,789, filed Sep. 12, 2004, Nitta, et al., “Nonvolatile Semiconductor Memory Device”.
U.S. Appl. No. 10/940,812, filed Sep. 15, 2004, Mitanl, et al., “Non-Volatile Semiconductor Memory Device Allowing Efficient Programming Operation and Erasing Operation in Short Period of Time”.

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory device with memory transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory device with memory transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory device with memory transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3658213