Non-volatile semiconductor memory device with improved collectiv

Details Non-volatile semiconductor memory device with improved collectiv Non-volatile semiconductor memory device with improved collectiv

1991-03-15

1996-08-06

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

36518909, 36518533, 36518519, 36518511, G11C 700, G11C 1134, G11C 800

Patent

active

055441173

ABSTRACT:
A non-volatile semiconductor memory device according to the present invention comprises a plurality of memory cells including floating gates, an injecting device for injecting electrons to the floating gate of each of the memory cells, a removing device for removing electrons from the floating gate of each of the memory cells, an erasure instructing device for instructing erasing operation, and a controlling device responsive to an instruction output from the erasure instructing device for controlling the injecting device such that electrons are simultaneously injected to all the floating gates of the memory cells which are to be erased before the removing operation by the removing device.

REFERENCES:
patent: 4336603 (1982-06-01), Kotecha et al.
patent: 4763305 (1988-08-01), Kuo
patent: 4890259 (1989-12-01), Simko
patent: 4979005 (1990-12-01), Mitchell
patent: 5053990 (1991-10-01), Kreifels et al.

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