Non-volatile semiconductor memory device with a small distributi

Static information storage and retrieval – Floating gate – Particular biasing

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36518909, 365218, G11C 700

Patent

active

054446554

ABSTRACT:
A semiconductor memory device includes a silicon chip, a memory cell transistor formed in the chip, a charge pump circuit formed in the chip, for boosting a source potential to generate a boosted potential, and a switching circuit formed in the chip. The switching circuit switches the portions to which the boosted voltage is supplied, depending on whether data is being written or erased. When writing data, the boosted potential is led to a drain of the memory cell transistor. When erasing data, the boosted potential is led to a source of the memory cell transistor.

REFERENCES:
patent: 4794564 (1988-12-01), Watanabe
patent: 5119330 (1992-06-01), Tanagawa
patent: 5122985 (1992-06-01), Santin
patent: 5283758 (1994-02-01), Nakayama et al.
patent: 5295105 (1994-03-01), Atsumi
Nikkei Microdevices, Nasir Bilal, 1992.6. pp. 72-73.

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