Non-volatile semiconductor memory device with a sense...

Details Non-volatile semiconductor memory device with a sense... Non-volatile semiconductor memory device with a sense...

2010-02-01

2011-11-01

Tran, Andrew Q (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185200, C365S185230

Reexamination Certificate

active

08050100

ABSTRACT:
A non-volatile semiconductor memory device includes a sense amplifier, first and second bit lines that are connected to the sense amplifier, a first memory cell column that is connected to the first bit line, the first memory cell column being formed by a plurality of MONOS type transistors, a first constant current source that is connected to the second bit line, the first constant current source generating a reference current for the first memory cell column, and a first switch that is provided between the first constant current source and the second bit line, the first switch being formed by a MONOS type transistor.

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patent: 6094392 (2000-07-01), Utsugi et al.
patent: 7590003 (2009-09-01), Jo et al.
patent: 2006/0083070 (2006-04-01), Arakawa
patent: 60-167197 (1985-08-01), None
patent: 2006-114154 (2006-04-01), None

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