Non-volatile semiconductor memory device having verify function

Details Non-volatile semiconductor memory device having verify function Non-volatile semiconductor memory device having verify function

1997-08-12

1999-03-09

Le, Vu A.

Static information storage and retrieval

Floating gate

Particular biasing

36518517, 36518522, 36518529, G11C 700

Patent

active

058809945

ABSTRACT:
A non-volatile semiconductor memory device includes a flip-flop circuit for holding write data in one of first and second states. A bit line is connected to the flip-flop circuit via a switching element and a transistor charges the bit line and line. A non-volatile memory cell, connected to the bit line and having a MOS transistor structure, stores data when a threshold thereof is set in one of first and second threshold ranges, wherein at the time of a write mode the threshold of the memory cell is shifted from the first threshold range towards the second threshold range while the flip-flop circuit remains in the first state and the shift of the threshold is not effected while the flip-flop circuit remains in the second state, and at the time of a verify mode following the write mode the bit line is kept at a charge potential by the charging transistor while the threshold remains in the second threshold range. A data setting circuit connects one of first and second signal nodes of the flip-flop circuit to a predetermined potential when the bit line is at the charge potential in the verify mode, thereby setting the flip-flop circuit in the second state irrespective of the state prior to the verify mode.

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