Non-volatile semiconductor memory device having long-life memory

Details Non-volatile semiconductor memory device having long-life memory Non-volatile semiconductor memory device having long-life memory

1997-10-30

1999-07-13

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518518, 36518524, 36518529, 36518533, G11C 1604

Patent

active

059235896

ABSTRACT:
A non-volatile semiconductor memory device is provided that includes a split gate type memory cell and a control unit. The split gate type memory cell has a floating gate electrode and a control gate electrode. The control unit counts a number of data rewritings and controls the voltage applied to the control gate electrode so that the Fowler-Nordheim tunnel current increases to sufficiently pull out the charge stored in the floating gate electrode when the number of data writings exceeds a predetermined number. This extends the life of the memory device.

REFERENCES:
patent: 5029130 (1991-07-01), Yeh
patent: 5245570 (1993-09-01), Fazio et al.
patent: 5526315 (1996-06-01), Kaya et al.
patent: 5636162 (1997-06-01), Coffman et al.
patent: 5659505 (1997-08-01), Kobayashi et al.

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