Non-volatile semiconductor memory device having large margin of

Details Non-volatile semiconductor memory device having large margin of Non-volatile semiconductor memory device having large margin of

1997-01-10

1998-10-27

Yoo, Do Hyun

Static information storage and retrieval

Floating gate

Particular biasing

365148, 36518521, 36518524, 365207, 3652257, G11C 700

Patent

active

058286047

ABSTRACT:
In a confirmation operation of write data after writing data into a memory cell transistor (a verify operation), a verify potential generation circuit supplies a verify potential VPVRFY to the control gate of a memory transistor. Verify potential VPVRFY is determined depending upon the resistance ratio of variable resistors and a value of a constant current supplied from a constant current source circuit. According to reduction of a power supply potential, potential VPVRFY is decreased. The conductance of a memory cell transistor is adjusted according to variation in a detection sensitivity of a sense amplifier according to variation in the power supply potential, whereby the cell threshold value after a write operation takes a constant value.

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patent: 5579262 (1996-11-01), Song
patent: 5629892 (1997-05-01), Tang
patent: 5642309 (1997-06-01), Kim et al.
patent: 5684741 (1997-11-01), Talreja

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