Static information storage and retrieval – Floating gate – Multiple values
Patent
1994-09-16
1996-02-06
Nelms, David C.
Static information storage and retrieval
Floating gate
Multiple values
36518512, 36518522, G11C 1604
Patent
active
054901103
ABSTRACT:
The electrically rewritable nonvolatile semiconductor memory device includes a plurality of memory cells arranged in rows and columns, a decoder circuit for selecting at least one of the plurality of memory cells, a writing circuit for writing data in the selected memory cell through the decoder circuit, a reading circuit for reading the data from the selected memory cell, a detecting circuit for detecting a change of the threshold voltage of each of the non-selected memory cells, which change is caused by a voltage applied to the non-selected memory cell when writing the data in the selected memory cell, and a restoring circuit for restoring the threshold voltage of the non-selected memory cell a value equal to or near to its original value on the basis of the result of the above detection.
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patent: 5122985 (1992-06-01), Santin
Yasushi Terada, Flash Memory Technology and Its Future, ICD 91-134, 1991.
Sawada Kikuzo
Sugawara Yoshikazu
Le Vu A.
Nelms David C.
Nippon Steel Corporation
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