Non-volatile semiconductor memory device having an improved test

Details Non-volatile semiconductor memory device having an improved test Non-volatile semiconductor memory device having an improved test

1990-07-27

1992-02-04

Fears, Terrell W.

Static information storage and retrieval

Addressing

36523008, 365201, G11C 1300

Patent

active

050864130

ABSTRACT:
An EEPROM device comprises a memory cell array having a plurality of non-volatile memory cells respectively disposed at locations defined by word lines and bit lines and memorizing pieces of data information in a rewriteable manner, respectively, a row address decoder circuit responsive to an address signal indicative of a row address for selectively activating one of the word lines, a column address decoder circuit responsive to an address signal indicative of a column address for selecting one of the bit lines, and a data control unit selectively carrying out erasing, write-in and read-out operations on one of the non-volatile memory cells, in which the row address decoder circuit is further operative to concurrently activate every second word line in the presence of the row address signal indicative of a first state and to concurrently activate the other word lines in the presence of the row address signal indicative of a second state in a testing mode of operation, and in which the data control unit carries out the erase and write-in operations on a plurality of the non-volatile memory cells coupled to the word lines to be activated in the testing mode of operation.

REFERENCES:
patent: 5036491 (1991-07-01), Yamaguchi

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory device having an improved test does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory device having an improved test, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory device having an improved test will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-350550