Non-volatile semiconductor memory device having a back ground op

Details Non-volatile semiconductor memory device having a back ground op Non-volatile semiconductor memory device having a back ground op

1998-03-24

1998-12-08

Nelms, David

Static information storage and retrieval

Floating gate

Particular connection

36518522, 36518529, 36518533, 365218, G11C 1604, G11C 1606, G11C 700

Patent

active

058479945

ABSTRACT:
In a flash memory, a reading bit line and a writing bit line are provided corresponding to a respective column of memory cells. A well voltage and a voltage on a source line can be controlled for each sub-block. Accordingly, data can be read at a sub-block while data can be written/erased at another sub-block, and therefore, the capacity ratio of a back ground operation region to the main memory region can be changed as desired.

REFERENCES:
patent: 5523980 (1996-06-01), Sakui et al.
patent: 5535158 (1996-07-01), Yamagat
patent: 5671388 (1997-09-01), Hasbun

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