Non-volatile semiconductor memory device for storing multivalue

Details Non-volatile semiconductor memory device for storing multivalue Non-volatile semiconductor memory device for storing multivalue

1996-05-15

1998-05-12

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular connection

36518518, 3651852, 36518524, G11C 700

Patent

active

057516340

ABSTRACT:
Memory cells each for storing 2-bit data are connected to a bit line. First and second flip-flop circuits are coupled to the bit line. The first flip-flop circuit holds the lower bit of 2-bit data read out from or written into the memory cell and the second flip-flop circuit holds the upper bit of 2-bit data read out from or written into the memory cell. At the data readout time, the upper bit is first read out from the memory cell and then the lower bit is read out from the memory cell. At the data writing time, the upper bit is first written into the memory cell and then the lower bit is written into the memory cell.

REFERENCES:
patent: 5088060 (1992-02-01), Endoh et al.
patent: 5379256 (1995-01-01), Tanaka et al.
patent: 5477495 (1995-12-01), Tanaka et al.

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