Non-volatile semiconductor memory device for selective cell flas

Details Non-volatile semiconductor memory device for selective cell flas Non-volatile semiconductor memory device for selective cell flas

1999-03-15

2000-08-29

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518512, G11C 1604

Patent

active

061117927

ABSTRACT:
Disclosed herein is a non-volatile semiconductor memory device comprising a mode signal output means for outputting a mode signal for conducting flash programming or flash erasing, a group selection signal output means for outputting a group selection signal for selecting a row decoding group, a first selection means for selecting the row decoding group controlling the word line in accordance with 10 the group selection signal, and a second selection means selecting the word line corresponding to the memory cell from a plurality of the word lines controlled by the row decoding group selected by the first selection means. In the present inventions the time required for the flash programming and the flash erasing can be reduced without the addition of a further element and the chip areas can be reduced.

REFERENCES:
patent: 5263003 (1993-11-01), Cowles et al.
patent: 5526307 (1996-06-01), Yiu et al.
patent: 5841721 (1998-11-01), Kwon et al.

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