Non-volatile semiconductor memory device capable of effecting hi

Details Non-volatile semiconductor memory device capable of effecting hi Non-volatile semiconductor memory device capable of effecting hi

1996-02-22

1997-02-25

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

36518909, 365233, 365203, G11C 1134

Patent

active

056065248

ABSTRACT:
A non-volatile semiconductor memory device raises the word line voltage by use of the edge of a clock to read out memory cell data. A plurality of voltage raising circuits are connected in parallel and each of the voltage raising circuits raises a power supply voltage. A level shifter is connected to the outputs of the plurality of voltage raising circuits to drive the word line. Driving means drives each of the plurality of voltage raising circuits by use of clocks each having only one edge in a period from the address changing time to the memory cell data readout starting time at which the precharging operation is terminated. The clocks for driving the voltage raising circuits have a phase difference with respect to one another for the respective voltage raising circuits.

REFERENCES:
patent: 5335205 (1994-08-01), Ogihara
patent: 5521817 (1996-05-01), Choi

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