Non-volatile semiconductor memory device and method of programmi

Details Non-volatile semiconductor memory device and method of programmi Non-volatile semiconductor memory device and method of programmi

1996-09-10

1998-06-30

Le, Vu A.

Static information storage and retrieval

Floating gate

Particular biasing

36518522, 36518503, G11C 700

Patent

active

057743975

ABSTRACT:
A non-volatile semiconductor memory device includes a semiconductor substrate, a memory cell including source and drain regions formed in a surface region of the semiconductor substrate, and a first gate insulating film, a charge storage layer, a second gate insulating film, and a control gate sequentially stacked on the semiconductor substrate, the memory cell being capable of electrically rewriting data by exchanging charges between the charge storage layer and the semiconductor substrate, and a means for applying a high potential to the semiconductor substrate and an intermediate potential to the control gate in a first data erase operation, and applying a high potential to the semiconductor substrate and a low potential to the control gate in second and subsequent data erase operations, thereby removing electrons from the charge storage layer.

REFERENCES:
patent: 5258949 (1993-11-01), Chang et al.
patent: 5293560 (1994-03-01), Harari
patent: 5369615 (1994-11-01), Harari et al.
patent: 5440505 (1995-08-01), Fazio et al.

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