Non-volatile semiconductor memory device and method for manufact

Details Non-volatile semiconductor memory device and method for manufact Non-volatile semiconductor memory device and method for manufact

1989-07-03

1991-09-24

James, Andrew J.

357 233, 357 238, H01L 2968

Patent

active

050517945

ABSTRACT:
A non-volatile semiconductor memory device such as EPROM or EEPROM includes floating and control gates. Thick oxide portions are formed at each end of the floating gate, and the thickness of the thick oxide portion adjacent to a drain region is thicker than that of the thick oxide portion adjacent to a source region.

REFERENCES:
patent: 4794565 (1988-12-01), Wu et al.
patent: 4878101 (1989-10-01), Hsieh et al.
IEDM Technical Digest; Chi Chang and Jih Lien; Dec. 6, 1987.

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