Non-volatile semiconductor memory device and erasing method for

Details Non-volatile semiconductor memory device and erasing method for Non-volatile semiconductor memory device and erasing method for

1999-12-13

2000-12-12

Tran, Andrew Q.

Static information storage and retrieval

Floating gate

Particular biasing

36518529, 36518511, G11C 1610

Patent

active

06160741&

ABSTRACT:
An electrically erasable and writable non-volatile semiconductor memory device having a function of collectively erasing a plurality of memory blocks selected as erase object memory blocks is provided. A logic circuit and an output buffer circuit constitute an erase object memory block selection notifying circuit, which outputs an erase object memory block selection notifying signal indicating whether designated memory blocks have been selected as erase object memory blocks or not, in synchronization with an output enable signal supplied from the CPU. Thus, the erasing operation mode period in the non-volatile semiconductor memory device can be shortened.

REFERENCES:
patent: 4980861 (1990-12-01), Herdt et al.

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