Non-volatile semiconductor memory device and erasing method...

Details Non-volatile semiconductor memory device and erasing method... Non-volatile semiconductor memory device and erasing method...

2011-07-05

2011-07-05

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185200

Reexamination Certificate

active

07974135

ABSTRACT:
A non-volatile semiconductor memory device including a NAND cell unit with a plurality of electrically rewritable and non-volatile memory cells connected in series, one end thereof being coupled to a bit line via a first select gate transistor while the other end is coupled to a source line via a second select gate transistor, wherein the memory device has an erase-verify mode for verifying an erase state of the memory cells in the NAND cell unit, the erase-verify mode including two verify-read operations adapted according to cell ranges to be erase-verified in the NAND cell unit.

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