Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2006-01-03
2006-01-03
Elms, Richard (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185210
Reexamination Certificate
active
06982904
ABSTRACT:
A non-volatile semiconductor memory device includes: a cell array having electrically rewritable and non-volatile memory cells arranged therein; and a sense amplifier circuit configured to detect voltage change of a bit line in the cell array, thereby reading data of a selected memory cell coupled to the bit line, wherein the sense amplifier circuit is controlled to read data at plural timings within a period in which the bit line voltage is changing in correspondence with the selected memory cell, and compare data read out by successive two data read operations with each other so as to judge a threshold margin of the selected memory cell.
REFERENCES:
patent: 6304489 (2001-10-01), Iwahashi
patent: 6781904 (2004-08-01), Lee et al.
patent: 8-279295 (1996-10-01), None
Elms Richard
Kabushiki Kaisha Toshiba
Nguyen Hien
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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