Non-volatile semiconductor memory device and a method for fabric

Details Non-volatile semiconductor memory device and a method for fabric Non-volatile semiconductor memory device and a method for fabric

1991-07-09

1993-07-06

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 48, 437 52, H01L 21205, H01L 21266, H01L 21285

Patent

active

052253619

ABSTRACT:
A long-life, electrically writable and erasable non-volatile semiconductor memory device is disclosed. The memory device is fabricated in the following steps. After forming a first gate insulating film on a semiconductor substrate, a window is opened in the first gate insulating film to expose a portion of the surface of the semiconductor substrate, using a two-step etching technique in which dry etching and wet etching are performed successively. The exposed portion of the semiconductor substrate not over-etched is selectively oxidized to form a tunnel insulating film (second gate insulating film) having edge portions resistant to dielectric breakdown. Thereafter, a floating gate, a third gate insulating film, and a control gate are formed sequentially. The floating gate is patterned in such a way as to cover the entire tunnel insulating film or cross only a portion of an edge of the tunnel insulating film. The stress caused to the tunnel insulating film as a result of the oxidation process for forming the third gate insulating film is relieved, providing the tunnel insulating film with resistance to dielectric strength.

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G. Yaron et al., 1982 Digest of Technical Papers, ISSCC 82, pp. 108-109, "Nonvolatile Memories".
Wolf et al., "Silicon Processing for the VLSI Era, vol. 1: Process Technology", Lattice Press, 1986, p. 305.

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