Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2007-04-24
2007-04-24
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C257S003000, C257S004000, C257S062000, C257S529000, C257S530000, C365S182000, C365S185040
Reexamination Certificate
active
10389753
ABSTRACT:
Dummy cells are disposed in alignment with memory cells arranged in rows and columns in a memory array. The memory cell includes a variable resistance element and a select transistor having a collector connected to a substrate region and selecting the variable resistance element in response to a row select signal. Corresponding to a row of memory cells, there is provided a word line connecting to memory cells on corresponding row and transmitting the row select signal, and a word line shunting line electrically connected at predetermined intervals to each word line. Moreover, corresponding to a row of dummy cells and a column of dummy cells, there is provided substrate shunt lines electrically connected to the substrate region. The voltage distribution in the substrate region is eliminated to achieve stable operating characteristics of the memory cell transistor. In addition, a word line is driven at high speed by a word line shunt structure.
REFERENCES:
patent: 5526308 (1996-06-01), Itoh
patent: 6128208 (2000-10-01), Itoh et al.
patent: 6141241 (2000-10-01), Ovshinsky et al.
patent: 6191979 (2001-02-01), Uekubo
patent: 6314014 (2001-11-01), Lowrey et al.
patent: 6327166 (2001-12-01), Itoh et al.
patent: 6339544 (2002-01-01), Chiang et al.
patent: 6483754 (2002-11-01), Agrawal
patent: 6816404 (2004-11-01), Khouri et al.
patent: 2002/0131309 (2002-09-01), Nishihara et al.
patent: 2002/0142236 (2002-10-01), Iwasaki et al.
patent: 2003/0031045 (2003-02-01), Hosotani
patent: 2004/0012008 (2004-01-01), Chen
patent: 2001-266565 (2001-09-01), None
M. Gill et al., “Ovonic Unified Memory—A High-Performance Nonvolatile Memory Technology for Stand-Alone Memory and Embedded Applications”, IEEE International Solid-State Circuits Conference, Feb. 5, 2002, Digest of Technical Papers, pp. 202-203.
Erdem Fazli
Pert Evan
Renesas Technology Corp.
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