Non-volatile semiconductor memory device allowing efficient...

Details Non-volatile semiconductor memory device allowing efficient... Non-volatile semiconductor memory device allowing efficient...

2008-03-04

2008-03-04

Phan, Trong (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185190, C365S185220

Reexamination Certificate

active

11802314

ABSTRACT:
Until the number of pulse application n reaches 12, as a first-half pulse, a pulse is set to have a width fixed to 2 ms, and its voltage is increased every time. As a latter-half pulse, the pulse is set to have a width fixed to 3 ms and the pulse voltage is increased every time until the maximum voltage is attained. After the maximum voltage is attained, first, the pulse of a width of 3 ms is applied twice, the pulse of a width of 4 ms with the maximum voltage is applied twice, and the pulse of a width of 5 ms with the maximum voltage is applied twice. Even after the maximum voltage is attained, change over time of a threshold voltage can be more linear. Thus, a non-volatile semiconductor memory device allowing efficient programming operation and erasing operation in a short period of time can be provided.

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