Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2007-11-27
2007-11-27
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185180, C365S185330, C365S185280, C365S185240, C365S185190
Reexamination Certificate
active
10871110
ABSTRACT:
A non-volatile semiconductor memory device includes a non-volatile memory cell and a write circuit that is adapted to write data to the memory cell by supplying a write voltage and a write control voltage to the memory cell to change the write state of the memory cell, changing the supply of the write control voltage to reduce the rate of changing the write state, further changing the supply of the write control voltage to control the reduced rate of changing the write state and terminating the write operation to the memory cell while the rate of changing the write state is reduced.
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Kabushiki Kaisha Toshiba
Nguyen Viet Q.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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