Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

1997-05-12

1999-05-25

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257649, 257324, H01L 29788

Patent

active

059071834

ABSTRACT:
A tunnel oxide film is formed on the surface of a p-type silicon substrate, and a floating gate electrode made from a polysilicon film is formed on the surface of the tunnel oxide film. On the surface of the floating gate electrode, a control gate electrode is formed via an NON film formed by sequentially stacking a silicon nitride film, a silicon oxide film, and a silicon nitride film. A side oxide film is formed on the side surfaces of the floating gate electrode and the control gate electrode. Source and drain regions made from an n-type diffused layer are formed on the surfaces of element regions of the silicon substrate on the two sides of the floating gate electrodes.

REFERENCES:
patent: 4888820 (1989-12-01), Chen et al.
patent: 4912676 (1990-03-01), Paterson et al.
patent: 5045488 (1991-09-01), Yeh
patent: 5063431 (1991-11-01), Ohshima
patent: 5158902 (1992-10-01), Hanada
patent: 5223451 (1993-06-01), Uemura et al.
patent: 5304829 (1994-04-01), Mori et al.
patent: 5407870 (1995-04-01), Okada et al.
patent: 5445981 (1995-08-01), Lee
patent: 5460992 (1995-10-01), Hasegawa
patent: 5470771 (1995-11-01), Fujii et al.
patent: 5600166 (1997-02-01), Clementi et al.
S. Mori et al., "Bottom-Oxide Scaling for Thin Nitride/Oxide Interpoly Dielectric in Stacked-Gate Nonvolatile Memory Cells", IEEE Transactions on Electron Dev., vol. 39, No. 2, Feb. 1992.
C.S. Lai et al., "The Electrical Characteristics of Polysilicon Oxide Grown in Pure N.sub.2 O", IEEE Electron Device Letters, vol. 16, No. 9, Sep. 1995.
S. Chiang et al., "Antifuse Structure Comparison for Field Programmable Gate Arrays", IEDM 92, pp. 611-614.
Y. Okada et al., "Furnace Grown Gate Oxynitride Using Nitric Oxide (NO)", IEEE Transactions on Electron Devices, vol. 41, No. 9, Sep. 1994.
Sze, S.M., "Redistribution of Dopants at Interface", VLSI Technology, pp. 129-131, Macgraw-Hill (Series in Electrical Engineering, Electronics and Electronic Circuits), Apr. 1988.

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-402708