Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-01-04
2011-01-04
Mai, Son L (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S185170, C365S189090
Reexamination Certificate
active
07864586
ABSTRACT:
A non-volatile semiconductor memory device includes: a memory cell array with electrically rewritable and non-volatile memory cells arranged therein; a first register group configured to store control data used for controlling memory operations; an adjusting data storage area defined in the memory cell array so as to store adjusting data used for adjusting the control data; and a second register group configured to store the adjusting data read from the adjusting data storage area.
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Kabushiki Kaisha Toshiba
Mai Son L
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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