Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

1990-07-03

1993-08-31

LaRoche, Eugene R.

Static information storage and retrieval

Floating gate

Particular biasing

365184, G11C 1134

Patent

active

052414981

ABSTRACT:
There is a provided non-volatile semiconductor memory device including a memory cell including a source, a drain, a floating gate, and a control gate. To read out data from the memory cell, a voltage of not more than 2 V, obtained by decreasing an external power source voltage, is applied to the drain of the memory cell. Various constants of the memory cell are set so as to control an ON current to be not more than 300 .mu.A when the memory cell is placed in an ON state while a threshold voltage of the memory cell is low.

REFERENCES:
patent: 4203158 (1980-05-01), Frohman-Bentchkowsky
patent: 4879689 (1989-11-01), Atsumi
patent: 4930105 (1990-05-01), Matsumoto
patent: 5010520 (1991-04-01), Minagawa
patent: 5095461 (1992-03-01), Miyakawa
Maruyama, T., "Wide Operating Voltage Range and Low Power Consumption EEPROM Structure for Consumer Oriented ASIC Application", IEEE 1988 Custom IC Conference, pp. 4.1.1-4.1.4, N.Y., May 16-18, 1988.

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2302822