Non-volatile semiconductor memory device

Static information storage and retrieval – Floating gate – Particular biasing

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36518518, 36518521, 36518524, G11C 700

Patent

active

061152935

ABSTRACT:
A non-volatile semiconductor memory device includes a first cell including a first floating-gate type transistor having a first threshold voltage, and a second cell including a second floating-gate type transistor having a second threshold voltage different from the first threshold voltage. Data is stored by a difference between a first current flowing in the first cell and a second current flowing in the second cell.

REFERENCES:
patent: 5754010 (1998-05-01), Caravella et al.
patent: 5818761 (1998-10-01), Onakado
patent: 5999454 (1999-12-01), Smith
patent: 6005802 (1999-12-01), Takeuchi
patent: 6038167 (2000-03-01), Miwa et al.
patent: 6041012 (2000-03-01), Banba et al.

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