Non-volatile semiconductor memory device

Static information storage and retrieval – Floating gate – Particular connection

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Details

36518511, 365205, 36523003, 365218, 36523001, 365196, 36518518, G11C 700

Patent

active

061479055

ABSTRACT:
A non-volatile semiconductor memory device includes memory cell blocks in which n sectors for erasing are defined where n is an integer equal to or greater than 1. Each of the memory cell blocks includes sense amplifiers, and an activation signal generating circuit activating an activation signal for generating the sense amplifiers. Data held in the sense amplifiers of the memory cell blocks are continuously output in accordance with a burst length. Sectors related to blocks corresponding to the burst length are sequentially subjected to an erase operation.

REFERENCES:
patent: 5410680 (1995-04-01), Challa et al.
patent: 5787484 (1998-07-01), Norman
patent: 6016280 (2000-01-01), Maesako et al.

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