Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

1999-09-30

2000-10-31

Nelms, David

Static information storage and retrieval

Floating gate

Particular connection

36518512, 36518526, G11C 1604

Patent

active

061412503

ABSTRACT:
A non-volatile semiconductor memory device being able to read, write and erase data at a much higher speed. The non-volatile semiconductor memory device used as a flash memory is composed of a memory cell array, a row address buffer, a row decoder, a row driver, a column address buffer, a column decoder, a column selector, a sense amplifier circuit, a writing circuit and a control circuit, wherein selection and non-selection of memory cells at the time of reading is performed not by a control gate of a memory transistor but by control on normal voltage of a switch transistor.

REFERENCES:
patent: 5646060 (1997-07-01), Chang et al.
patent: 5923587 (1999-07-01), Choi
S. Mukherjee et al., "A Single Transistor EEPROM Cell and its Implementation in a 512K CMOS EEPROM", International Electronic Device Conference Technical Digest, 1985 IEEE, pp. 616-619.

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