Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

1995-12-29

1998-04-28

Popek, Joseph A.

Static information storage and retrieval

Floating gate

Particular biasing

36518518, 257315, G11C 1134

Patent

active

057454167

ABSTRACT:
A non-volatile semiconductor memory which is capable of high speed and highly accurate analog data writing. The memory includes a first MOS type transistor having a first floating gate which is electrically isolated. A first electrode is capacitively coupled with the first floating gate. A second electrode is connected via a tunnel junction with the first floating gate. A third electrode is capacitively coupled with the second electrode. A second MOS type transistor interconnects the first and second electrodes. A means is provided for applying a predetermined potential difference between the first and third electrodes to thereby cause a tunnel current to flow in the tunnel junction and to store an electric charge in the first floating gate to thereby cause the second MOS type transistor to conduct when the electric charge has reached a predetermined value.

REFERENCES:
patent: 4510584 (1985-04-01), Dias et al.
patent: 4685083 (1987-08-01), Leuschner
patent: 4780750 (1988-10-01), Nolan et al.
patent: 4802124 (1989-01-01), O'Brien, Jr.
patent: 5081610 (1992-01-01), Olivo et al.

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1539369