Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

1974-07-03

1977-04-19

James, Andrew J.

Communications: electrical

Land vehicle alarms or indicators

Internal alarm or indicator responsive to a condition of the...

357 52, 357 54, 340173R, H01L 2978, H01L 2934, G11B 1300, G11B 902

Patent

active

040191982

ABSTRACT:
A non-volatile semiconductor memory device includes source and drain regions formed on a semiconductor substrate to define p-n junctions with the substrate and a gate layer having a silicon oxide film and a silicon nitride film. A high impurity concentration diffusion layers are formed around at least one of the source and drain regions, which have the same conductivity type as the substrate, an impurity concentration of above 10.sup.17 atoms cm.sup.-.sup.3 and a width of below 1 .mu.m.

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Electronics Review; vol. 41, No. 22, Oct. 28, 1968, pp. 49 and 50.

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