Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

2009-03-04

2011-12-20

Hidalgo, Fernando N. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185180, C365S185250, C365S185290

Reexamination Certificate

active

08081512

ABSTRACT:
A non-volatile semiconductor memory device includes a non-volatile memory having a plurality of blocks each including a plurality of memory cells, a bit line electrically connected to one end of a current path of the memory cell, a source line electrically connected to the other end of the current path of the memory cell, a word line electrically connected to the gate electrode, a sense amplifier circuit electrically connected to the bit line and configured to read data from the memory cell, a row decoder electrically connected to the word line and configured to apply a read voltage at which the memory cell is set to an ON state to the word line, and a controller configured to measure a cell current flowing through the memory cell in the ON state to judge whether the memory cell has been degraded.

REFERENCES:
patent: 5737742 (1998-04-01), Achiwa et al.
patent: 6341085 (2002-01-01), Yamagami et al.
patent: 7242615 (2007-07-01), Nagashima
patent: 2005/0111259 (2005-05-01), Fukuda et al.
patent: 2008/0106939 (2008-05-01), Yamagami et al.
patent: 2008/0159046 (2008-07-01), Rinerson et al.
patent: 2008/0279027 (2008-11-01), Boeve
patent: 2008/0298123 (2008-12-01), Mihnea et al.
patent: 2009/0161430 (2009-06-01), Allen et al.
patent: 2010/0180073 (2010-07-01), Weingarten et al.
patent: 2010/0207189 (2010-08-01), Kellam
patent: 2010/0325353 (2010-12-01), Kim
patent: 8-7597 (1996-01-01), None
patent: 10-0271701 (2000-11-01), None
patent: 10-2004-0008532 (2004-01-01), None
patent: 10-2005-0050148 (2005-05-01), None
patent: 10-2005-0059314 (2005-06-01), None
patent: 10-2005-0067203 (2005-06-01), None
patent: 10-0624590 (2006-09-01), None
patent: 10-2006-0130018 (2006-12-01), None
patent: 10-2007-0012582 (2007-01-01), None
patent: 10-0725979 (2007-06-01), None
patent: 10-2009-0032246 (2009-04-01), None
Office Action issued May 31, 2011 in Korean Patent Application No. 10-2009-36434 (with English translation). 6 pages.
Korean Office Action issued Oct. 15, 2010, in Patent Application No. 10-2009-0036434 (with English-language translation).

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4310641