Non-volatile semiconductor memory device

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185180, C365S185010, C365S185030, C711S100000, C711S101000, C711S102000, C711S103000

Reexamination Certificate

active

07486559

ABSTRACT:
2 or more sets of initial setup data specifying different operation conditions are stored in a memory cell array comprising electrically-rewritable non-volatile memory cells arranged therein. A control circuit reads a set of initial setup data out of the 2 or more sets of initial setup data via an sense amplifier circuit based on the area information. The initial setup data is transferred to an initial setup data latch and stored therein.

REFERENCES:
patent: 6614689 (2003-09-01), Roohparvar
patent: 6751122 (2004-06-01), Kawai et al.
patent: 6831859 (2004-12-01), Hosono et al.
patent: 2002/0039311 (2002-04-01), Takeuchi et al.
patent: 2003/0142545 (2003-07-01), Imamiya et al.
patent: 2005/0111259 (2005-05-01), Fukuda et al.
patent: 2007/0245068 (2007-10-01), Yero
patent: 2004-40356 (2004-02-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Non-volatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4084792

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.