Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

2006-07-07

2008-03-04

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S203000

Reexamination Certificate

active

07339833

ABSTRACT:
Using charges accumulated in a capacitance element connected to a drain side node of a memory cell, data is written in accordance with source side injection method. The capacitance value of the capacitance element is changed in accordance with the value of write data. A non-volatile semiconductor memory device allowing writing of multi-valued data at high speed with high precision is achieved.

REFERENCES:
patent: 3514765 (1970-05-01), Christensen
patent: 6950347 (2005-09-01), Kurata et al.
patent: 2007/0008780 (2007-01-01), Jung et al.
patent: 11-330432 (1999-11-01), None
patent: WO 02/073623 (2002-09-01), None

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