Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

2007-02-27

2007-02-27

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185180, C365S185250

Reexamination Certificate

active

10965775

ABSTRACT:
A non-volatile semiconductor memory device having a write mode in which wrong writing is prevented surely. The storage device comprises a NAND cell comprising a plurality of memory transistors connected in series and also connected at one end via a select gate transistor CG1to a bit line BL and at the other end via a select gate transistor SG2to a common source line SL. A write voltage Vpgm is applied to a control gate of a selected memory transistor in the NAND cell and Vss is applied to the controls gates of non-select memory transistors each adjacent to the selected memory transistor to thereby write data into the select memory transistor. When a second memory transistor from the bitline BL side is selected in the writing operation, a medium voltage Vpass is applied to the control gate of a first non-selected memory transistor from the bit line BL side, and a medium voltage Vpass is applied to the control gates of third and subsequent non-selected memory transistors from the bit line BL side.

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