Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

2007-07-10

2007-07-10

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185300

Reexamination Certificate

active

11321865

ABSTRACT:
A non-volatile semiconductor memory device comprises a semiconductor substrate; a cell well formed in the semiconductor substrate; a first sub cell array including part of a cell array of NAND cells arranged in array in the cell well; a second sub cell array including the remainder of the cell array and arranged in the same cell well as that for the first sub cell array; a first sense amp corresponding to the first sub cell array; a second sense amp corresponding to the second sub cell array; a first bit line group including one of portions of a bit line group divided on the way extending from the first sense amp to the second sense amp and corresponding to the first sub cell array; and a second bit line group including the other of the portions of the bit line group divided on the way and corresponding to the second sub cell array.

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