Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

2007-01-09

2007-01-09

Elms, Richard (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S189080

Reexamination Certificate

active

11143581

ABSTRACT:
A switch section connects a first wire line aSL to the gate of a first memory transistor1and the source of a second memory transistor2and a second wire line bSL to the source of the first memory transistor1and the gate of the second memory transistor2when first type data is to be written into a memory cell; and connects the first wire line aSL to the source of the first memory transistor1and the gate of the second memory transistor2and the second wire line bSL to the gate of the first memory transistor1and the source of the second memory transistor2when second type data is to be written into a memory cell.

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Fujio Masoka et al., “Furasshu Memori Gijyutsu Hando Bukku [Flash Memory Technical Handbook]” Aug. 15, 1993, Science Forum, p. 37.

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