Static information storage and retrieval – Floating gate – Particular biasing
Patent
1999-02-22
2000-10-17
Nelms, David
Static information storage and retrieval
Floating gate
Particular biasing
36518521, G11C 1601
Patent
active
061341479
ABSTRACT:
A semiconductor memory device comprises: memory cells 1 and 2 in which data are stored; capacitor 23 which are connected to the output line 10 of the memory cells 1 and 2 and are discharged according to a sense; and a sense circuit 25 which supplies a discharge current to the said non-volatile memory cell caused by discharge of said capacitor 23 and senses a change of the output voltage of said output line, which is generated according to a data stored in said non-volatile memory (cf. FIG. 1).
REFERENCES:
patent: 5880988 (1999-03-01), Bertin et al.
patent: 5929658 (1999-07-01), Cheung et al.
Lam David
Nelms David
Sanyo Electric Co,. Ltd.
LandOfFree
Non-volatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-475698