Non-volatile semiconductor memory device

Static information storage and retrieval – Floating gate – Particular biasing

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36518521, G11C 1601

Patent

active

061341479

ABSTRACT:
A semiconductor memory device comprises: memory cells 1 and 2 in which data are stored; capacitor 23 which are connected to the output line 10 of the memory cells 1 and 2 and are discharged according to a sense; and a sense circuit 25 which supplies a discharge current to the said non-volatile memory cell caused by discharge of said capacitor 23 and senses a change of the output voltage of said output line, which is generated according to a data stored in said non-volatile memory (cf. FIG. 1).

REFERENCES:
patent: 5880988 (1999-03-01), Bertin et al.
patent: 5929658 (1999-07-01), Cheung et al.

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