Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

1988-07-12

1990-03-06

Hecker, Stuart N.

Static information storage and retrieval

Floating gate

Particular biasing

365104, 357 235, G11C 1740, G11C 700

Patent

active

049071971

ABSTRACT:
A non-volatile semiconductor memory device includes a semiconductor substrate, and a source and a drain of a MOS transistor formed on one surface of the semiconductor substrate and spaced about from each other. First, second and third gates are formed on one side of the substrate through an insulating film and between the source and the drain of the MOS transistor. This memory device has one transistor construction and can be fabricated simply and finely.

REFERENCES:
patent: 4477883 (1984-10-01), Wada
patent: 4513397 (1985-04-01), Ipri et al.
patent: 4590503 (1986-05-01), Harari et al.
patent: 4608591 (1986-08-01), Ipri et al.
patent: 4752912 (1988-06-01), Guterman
Eeprom 1986 Nikkei Microdevices, pp. 67-79.

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-53676