Non-volatile semiconductor memory cell

Details Non-volatile semiconductor memory cell Non-volatile semiconductor memory cell

1993-10-07

1994-12-13

LaRoche, Eugene R.

Static information storage and retrieval

Floating gate

Particular biasing

365218, 257321, 257316, G11C 1134, G11C 700

Patent

active

053734653

ABSTRACT:
Disclosed is a flash EEPROM cell needing only a 5 volt external source using an on-chip voltage multiplier circuit to provide high voltages necessary to effect Fowler-Nordheim tunneling during both the program and erase modes. Properties of dielectric layers between a floating gate and a control gate and between the floating gate and a drain region differ to facilitate programming and erasing of the floating gate. Also disclosed is a method for producing a flash EEPROM cell by forming the insulative layer between a floating gate and a control gate to have a capacitance lower than the capacitance of the insulating layer between the floating gate and a drain region.

REFERENCES:
patent: 4328565 (1982-05-01), Harari
patent: 4412311 (1983-10-01), Miccoli et al.
patent: 4688078 (1987-08-01), Hseih
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 4783766 (1988-11-01), Samachisa et al.
patent: 4794565 (1988-12-01), Wu et al.
patent: 4804637 (1989-02-01), Smayling et al.
patent: 4806201 (1989-02-01), Mitchell et al.
patent: 4861730 (1989-08-01), Hsia et al.
patent: 4894802 (1990-01-01), Hsia et al.
patent: 4957877 (1990-09-01), Tam et al.
patent: 5084745 (1992-01-01), Iizuka
patent: 5111430 (1992-05-01), Morie
patent: 5200919 (1993-04-01), Kaya
patent: 5202850 (1993-04-01), Jenq
patent: 5216268 (1993-06-01), Chen et al.
patent: 5242848 (1993-09-01), Yeh

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1197682