Static information storage and retrieval – Format or disposition of elements
Reexamination Certificate
2005-05-17
2005-05-17
Phung, Anh (Department: 2824)
Static information storage and retrieval
Format or disposition of elements
C365S063000
Reexamination Certificate
active
06894913
ABSTRACT:
A method of writing data into a non-volatile semiconductor memory having a plurality of memory cells in which a word line is shared by memory cells and a bit line is shared by adjacent memory cells, the method including writing the data into memory cells connected to the same word line sequentially from a memory cell at one end to a memory cell at another end.
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Kume et al; A 1.28m2 Contactless Memory Cell Technology for a 3V-Only 64Mbit EEPROM; IEDM 92, pp. 991-993, 1992.
Nguyen Hien
Nixon & Vanderhye P.C.
Phung Anh
Sharp Kabushiki Kaisha
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