Non-volatile semiconductor memory and method for writing...

Details Non-volatile semiconductor memory and method for writing... Non-volatile semiconductor memory and method for writing...

2007-03-06

2007-03-06

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185030

Reexamination Certificate

active

11127022

ABSTRACT:
Data is written into a non-volatile semiconductor memory using one of at least four steps. A first step is executed if the final states of both the first bit (B1) and the second bit (B2) coincide with their respective initial states and includes maintaining the initial states of the first bit (B1) and the second bit (B2). A second step is executed if both the first bit (B1) and the second bit (B2) have erased final states and the initial states of both the first bit (B1) and the second bit (B2) were not erased and includes erasing both the first bit (B1) and the second bit (B2). A third step is executed if neither the first bit (B1) nor the second bit (B2) is to be changed from a programmed initial state to an erased final state and includes programming the first bit (B1) if the first bit (B1) is to be changed from an erased initial state to a programmed final state, and/or programming the second bit (B2) if the second bit (B2) is to be changed from an erased initial state to a programmed final state. A fourth step is executed if only one of the first bit (B1) and the second bit (B2) is to be changed from a programmed initial state to an erased final state and includes first erasing both the first bit (B1) and the second bit (B2) and then programming the first bit (B1) if the first bit (B1) is programmed in the final state or programming the second bit (B2) if the second bit (B2) is programmed in the final state.

REFERENCES:
patent: 6490204 (2002-12-01), Bloom et al.
patent: 6829173 (2004-12-01), Ooishi

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