Non-volatile semiconductor memory

Details Non-volatile semiconductor memory Non-volatile semiconductor memory

2006-12-27

2008-10-14

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Interconnection arrangements

Ferroelectric

C365S051000, C365S049170, C365S063000, C365S230030, C365S230090, C365S189070, C365S049130, C365S117000, C365S145000

Reexamination Certificate

active

07436689

ABSTRACT:
When an address storing/comparing circuit stores no address identical to an external input address in read operation, in a main memory read data is written back to a data storing area after data read therefrom, and data indicating a sum of a predetermined value and a value of the read data is written to a history storing area after data read therefrom. In a sub memory, after data read from a history storing area, data read from the data storing area of the main memory is written to a data storing area and the data indicating the sum of the predetermined value and the value of the data read from the history storing area of the main memory is written to the history storing area, when the value of the data read from the history storing area of the main memory is larger than that of the sub memory.

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