Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-10-02
2007-10-02
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185090
Reexamination Certificate
active
11143709
ABSTRACT:
A non-volatile semiconductor memory is disclosed, which comprises a plurality of memory cell arrays each having a number-of-rewrites storage region allocated to a portion of a corresponding cell array, and a number-of-rewrites write control circuit which stores the number of rewrites in cell transistors of the number-of-rewrites storage regions in non-selected memory cell arrays of the plurality of memory cell arrays by executing write of data to the cell transistors at a voltage lower than an ordinary write voltage so as to change a threshold value of the cell transistors in analog fashion according to an amount of electrons injected into floating gates of the cell transistors.
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Sugiura Yoshihisa
Suzuki Takashi
Nguyen Tan T.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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