Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-12-19
2006-12-19
Elms, Richard (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185230, C365S185290, C365S185110
Reexamination Certificate
active
07151697
ABSTRACT:
A non-volatile semiconductor memory includes a substrate having a substrate region, at least one word line, a plurality of non-volatile memory cells arranged in a plurality of sectors and further comprising first wells of a first doping type, electrically insulating elements and switching elements. Each sector includes a plurality of non-volatile memory cells commonly arranged in a respective first well. The at least one word line electrically connecting memory cells of a group of sectors among the plurality of sectors. The first wells are separated from the substrate region and from each other by means of the electrically insulating elements. Each first well is connected to a respective switching element and the semiconductor memory is constructed such that each first well is biasable to a predetermined potential by means of the respective switching element. Further, a method is provided for operating the above non-volatile semiconductor memory.
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Riedel Stephan
Schulze Norbert
von Kamienski Elard Stein
Elms Richard
Infineon - Technologies AG
Nguyen N
Slater & Matsil L.L.P.
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