Non-volatile semiconductor memory

Details Non-volatile semiconductor memory Non-volatile semiconductor memory

1998-11-20

2000-02-15

Phan, Trong

Static information storage and retrieval

Floating gate

Particular biasing

36518522, 36518529, G11C 1604, G11C 1606

Patent

active

060260238

ABSTRACT:
A non-volatile semiconductor memory includes a reference voltage generating circuit including a series circuit formed of a resistor and a diode, and a constant current circuit for supplying a constant current having a temperature dependency different from that of the diode, to the series circuit, so as to generate at one end of the series circuit a reference voltage having a temperature dependency equivalent to that of the threshold voltage of an erased memory cell. An erase verify voltage generating circuit generates on the basis of the reference voltage an erase verify voltage having a temperature dependency equivalent to that of the threshold voltage of the erased memory cell, and a read voltage generating circuit generates on the basis of the reference voltage a read voltage having a temperature dependency equivalent to that of the threshold voltage of the erased memory cell. Thus, a margin enough to realize a high speed reading can be ensured between the read voltage and the erase verify voltage, regardless of a temperature variation.

REFERENCES:
patent: 5579262 (1996-11-01), Song
patent: 5615153 (1997-03-01), Yiu et al.
patent: 5864504 (1999-01-01), Tanzawa et al.

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1911177