Non-volatile semiconductor device with selecting transistor form

Details Non-volatile semiconductor device with selecting transistor form Non-volatile semiconductor device with selecting transistor form

1992-10-08

1995-05-02

Nguyen, Viet Q.

Static information storage and retrieval

Floating gate

Particular biasing

257314, 257315, G11C 1140

Patent

active

054126002

ABSTRACT:
An EEPROM enabling high density integration with less power consumption includes source/drain regions formed on the main surface of a P type silicon substrate, and a pair of memory transistors formed therebetween, and a selecting transistor formed between memory transistors and on the main surface of the P type semiconductor substrate. Memory transistors include control gates, and floating gates, respectively. Writing and erasure of data are conducted taking advantage of F-N tunnel phenomenon through tunnel regions.

REFERENCES:
patent: 4527259 (1985-07-01), Watanabe
patent: 4797856 (1989-01-01), Lee et al.
patent: 4868619 (1989-09-01), Mukherjee et al.
patent: 4990979 (1991-02-01), Otto
patent: 5021999 (1991-06-01), Kohda et al.
patent: 5051796 (1991-09-01), Gill
patent: 5278439 (1994-01-01), Ma et al.
IBM Technical Disclosure Bulletin vol. 35 No. 4B Sep. 1992 pp. 130-131.
"An In-System Reprogrammable 32K.times.8 CMOS Flash Memory", by Virgil N. Kynett et al., IEEE Journal of Solid-State Circuits, vol. 23, No. 5, Oct. 1988, pp. 1157-1163.
Nonvolatile Memories, "An Experimental 4 Mb CMOS EEPROM with a NAND Structured Cell", by Yasuo Itoh et al., 1989 IEEE International Solid-State Circuits Conference, pp. 134-135.

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